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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12, Pages 1649–1653 (Mi phts7461)  
This article is cited in 16 scientific papers (total in 16 papers)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

A. V. Zdoroveyshcheva, M. V. Dorokhina, P. B. Deminaa, A. V. Kudrinb, O. V. Vikhrovaa, M. V. Vedb, Yu. A. Danilovb, I. V. Erofeevaa, R. N. Kriukovb, D. E. Nikolichevb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Department of Physics, University of Nizhny Novgorod
Full-text PDF (367 kB) Citations (16)
Abstract: The possibility of fabricating a ferromagnetic injector based on a near-equiatomic CoPt alloy with pronounced perpendicular magnetization anisotropy in the InGaAs/GaAs spin light-emitting diode is shown. The physical properties of experimental spin light-emitting diode prototypes are comprehensively studied. Circularly polarized electroluminescence of fabricated diodes is obtained in zero magnetic field due to the remanent magnetization of CoPt layers.
Received: 15.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 12, Pages 1601–1604
DOI: https://doi.org/10.1134/S106378261512026X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Zdoroveyshchev, M. V. Dorokhin, P. B. Demina, A. V. Kudrin, O. V. Vikhrova, M. V. Ved, Yu. A. Danilov, I. V. Erofeeva, R. N. Kriukov, D. E. Nikolichev, “CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1649–1653; Semiconductors, 49:12 (2015), 1601–1604
Citation in format AMSBIB
\Bibitem{ZdoDorDem15}
\by A.~V.~Zdoroveyshchev, M.~V.~Dorokhin, P.~B.~Demina, A.~V.~Kudrin, O.~V.~Vikhrova, M.~V.~Ved, Yu.~A.~Danilov, I.~V.~Erofeeva, R.~N.~Kriukov, D.~E.~Nikolichev
\paper CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 12
\pages 1649--1653
\mathnet{http://mi.mathnet.ru/phts7461}
\elib{https://elibrary.ru/item.asp?id=24195353}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 12
\pages 1601--1604
\crossref{https://doi.org/10.1134/S106378261512026X}
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    • This publication is cited in the following 16 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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