Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

Low-temperature photoluminescence in $n$-Cz–Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called $X$ and $W$ centers formed from self-interstitial silicon atoms, $H$ and $P$ centers containing oxygen atoms, and Er centers containing Er$^{3+}$ ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for $X$ and $H$ centers. In the case of $P$ and Er centers, the values of the energies practically coincide with previously published data. For $W$ centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.