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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1, Pages 11–14 (Mi phts7476)  
This article is cited in 6 scientific papers (total in 6 papers)

Electronic properties of semiconductors

On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors

T. S. Kavetskyya, V. M. Tsmots'a, O. Šaušab, A. L. Stepanovcd

a Drohobych Ivan Franko State Pedagogical University
b Institute of Physics, Slovak Academy of Sciences
c Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
d Kazan (Volga Region) Federal University
Full-text PDF (218 kB) Citations (6)
Abstract: Unirradiated and $\gamma$-irradiated (average energy $E$ = 1.25 MeV and dose $\Phi$ = 2.41 MGy) chalcogenide glassy semiconductors (CGSs) As$_2$S$_3$ и Ge$_{15.8}$As$_{21}$S$_{63.2}$ are studied by positron annihilation lifetime spectroscopy (PALS) and Doppler broadening of the 0.511-MeV annihilation line (DBAL). Two $^{22}$Na positron sources with activities of 0.6 and 2.0 MBq and Kapton film thicknesses of 8.0 and 25.0 $\mu$m, respectively, are used. It is shown that radiation-induced changes in the PALS parameters of the CGS types under study are within measurement errors. The DBAL method appeared more efficient and accurate for studying radiation-stimulated processes in CGSs.
Received: 08.04.2013
Accepted: 17.04.2013
English version:
Semiconductors, 2014, Volume 48, Issue 1, Pages 9–12
DOI: https://doi.org/10.1134/S1063782614010151
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. S. Kavetskyy, V. M. Tsmots', O. Šauša, A. L. Stepanov, “On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 11–14; Semiconductors, 48:1 (2014), 9–12
Citation in format AMSBIB
\Bibitem{KavTsmSau14}
\by T.~S.~Kavetskyy, V.~M.~Tsmots', O.~{\v S}au{\v s}a, A.~L.~Stepanov
\paper On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 1
\pages 11--14
\mathnet{http://mi.mathnet.ru/phts7476}
\elib{https://elibrary.ru/item.asp?id=21310685}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 1
\pages 9--12
\crossref{https://doi.org/10.1134/S1063782614010151}
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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