Structure and optical properties of heterostructures based on MOCVD (Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$)$_{1-z}$Si$_z$ alloys

Epitaxial heterostructures produced by MOCVD on the basis of Al$_x$Ga$_{1-x}$As ternary alloys with the composition parameter $x\approx$ 0.20–0.50 and doped to a high Si and P atomic content are studied. Using the high-resolution X-ray diffraction technique, scanning electron microscopy, X-ray microanalysis, Raman spectroscopy, and photoluminescence spectroscopy, it is shown that the epitaxial films grown by MOCVD are formed of five-component (Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$)$_{1-z}$Si$_z$ alloys.