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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1, Pages 32–35 (Mi phts7479)  
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor structures, low-dimensional systems, quantum phenomena

Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel

E. A. Evropeitsev, G. V. Klimko, T. A. Komissarova, I. V. Sedova, S. V. Sorokin, S. V. Gronin, D. Yu. Kazantsev, B. Ya. Ber, S. V. Ivanov, A. A. Toropov

Ioffe Institute, St. Petersburg
Full-text PDF (250 kB) Citations (1)
Abstract: The growth of III–V/II–VI : Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the AlGaAs/Zn(Mn)Se heterovalent interface by molecular-beam epitaxy is reported. Despite the decrease in the hole concentration in the GaAs channel upon a decrease in the distance between the channel and the heterovalent interface, the hole concentration reaches a value of 1.5 $\times$ 10$^{13}$ cm$^{-2}$ at a temperature of 300 K even at the minimum distance of 1.2 nm. Deep profiling by dynamic secondary-ion mass spectrometry confirmed the back diffusion of Mn from ZnMnSe into the III–V part. High hole concentration and the presence of magnetic manganese ions in the GaAs conduction channel determine the interest in the structures as possible objects in which the effect of magnetic ordering in heterogeneous semiconductor systems can be studied.
Received: 28.05.2013
Accepted: 04.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 1, Pages 30–33
DOI: https://doi.org/10.1134/S1063782614010126
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Evropeitsev, G. V. Klimko, T. A. Komissarova, I. V. Sedova, S. V. Sorokin, S. V. Gronin, D. Yu. Kazantsev, B. Ya. Ber, S. V. Ivanov, A. A. Toropov, “Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 32–35; Semiconductors, 48:1 (2014), 30–33
Citation in format AMSBIB
\Bibitem{EvrKliKom14}
\by E.~A.~Evropeitsev, G.~V.~Klimko, T.~A.~Komissarova, I.~V.~Sedova, S.~V.~Sorokin, S.~V.~Gronin, D.~Yu.~Kazantsev, B.~Ya.~Ber, S.~V.~Ivanov, A.~A.~Toropov
\paper Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 1
\pages 32--35
\mathnet{http://mi.mathnet.ru/phts7479}
\elib{https://elibrary.ru/item.asp?id=21310688}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 1
\pages 30--33
\crossref{https://doi.org/10.1134/S1063782614010126}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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