Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface

Features of the growth of InAs quantum dots in an Al$_{0.35}$Ga$_{0.65}$As matrix by molecular beam epitaxy at different substrate temperatures, deposition rates, and amounts of deposited InAs are studied. The optimum conditions for growing an array of low-density ($\le$ 2 $\times$ 10$^{10}$ cm$^{-2}$) small (height of no more than 4 nm) self-organized quantum dots are determined. The possibility of the formation of optically active InAs quantum dots emitting in the energy range 1.3–1.4 eV at a distance of no more than 10 nm from the coherent heterovalent GaAs/ZnSe interface is demonstrated. It is established that inserting an optically inactive 5-nm GaAs quantum well resonantly coupled with InAs quantum dots into the upper AlGaAs barrier layer enhances the photoluminescence efficiency of the quantum-dot array in hybrid heterostructures.