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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1, Pages 55–60 (Mi phts7483)  
This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor physics

Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers

V. V. Lundina, A. E. Nikolaevab, A. V. Sakharovab, S. O. Usova, E. E. Zavarinab, P. N. Brunkovb, M. A. Yagovkinab, N. A. Cherkashinc, A. F. Tsatsul'nikovab

a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Center for Material Elaboration & Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055 Toulouse, France
Full-text PDF (1356 kB) Citations (9)
Abstract: III–N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.
Received: 23.05.2013
Accepted: 04.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 1, Pages 53–57
DOI: https://doi.org/10.1134/S1063782614010199
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, S. O. Usov, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, N. A. Cherkashin, A. F. Tsatsul'nikov, “Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 55–60; Semiconductors, 48:1 (2014), 53–57
Citation in format AMSBIB
\Bibitem{LunNikSak14}
\by V.~V.~Lundin, A.~E.~Nikolaev, A.~V.~Sakharov, S.~O.~Usov, E.~E.~Zavarin, P.~N.~Brunkov, M.~A.~Yagovkina, N.~A.~Cherkashin, A.~F.~Tsatsul'nikov
\paper Dependence of the efficiency of III--N blue LEDs on the structural perfection of GaN epitaxial buffer layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 1
\pages 55--60
\mathnet{http://mi.mathnet.ru/phts7483}
\elib{https://elibrary.ru/item.asp?id=21310692}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 1
\pages 53--57
\crossref{https://doi.org/10.1134/S1063782614010199}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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