Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1, Pages 81–87 (Mi phts7488)  

This article is cited in 4 scientific papers (total in 4 papers)

Materials of the 3rd Symposium "Semiconductor Lasers: Physics and Technology" (St. Petersburg, October 13-16, 2012)

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

S. A. Blokhinab, L. Ya. Karachinskyab, I. I. Novikovab, A. S. Payusova, A. M. Nadtochiya, M. A. Bobrovab, A. G. Kuz'menkovab, N. A. Maleevab, N. N. Ledentsovac, V. M. Ustinova, D. Bimbergd

a Ioffe Institute, St. Petersburg
b Connector Optics LLC, St. Petersburg
c VI Systems GmbH, D-10623 Berlin, Germany
d Technische Universität Berlin, D-10623 Berlin, Germany
Abstract: Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections with a data transmission rate of 25 Gbit/s per channel, are fabricated and studied. Lasers with a selectively oxidized current aperture 6 $\mu$m in diameter demonstrate multimode lasing with a quantum efficiency of 35–45% and a threshold current of 0.5–0.7 mA in the temperature range 20–85$^\circ$C. According to the results of small-signal frequency analysis, the maximum modulation frequency of the lasers exceeds 17 GHz, with the rate of its increase with current exceeding 9 GHz/mA$^{1/2}$, which provides VCSEL operation at a rate of 25 Gbit/s in the entire working temperature range. Endurance tests for 3000 h did not reveal any sudden degradation of the lasers. The optical power at working point and the threshold current changed relative to that at the beginning of the tests by no more than 5 and 10%, respectively.
Received: 01.06.2013
Accepted: 16.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 1, Pages 77–82
DOI: https://doi.org/10.1134/S1063782614010072
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Blokhin, L. Ya. Karachinsky, I. I. Novikov, A. S. Payusov, A. M. Nadtochiy, M. A. Bobrov, A. G. Kuz'menkov, N. A. Maleev, N. N. Ledentsov, V. M. Ustinov, D. Bimberg, “Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 81–87; Semiconductors, 48:1 (2014), 77–82
Citation in format AMSBIB
\Bibitem{BloKarNov14}
\by S.~A.~Blokhin, L.~Ya.~Karachinsky, I.~I.~Novikov, A.~S.~Payusov, A.~M.~Nadtochiy, M.~A.~Bobrov, A.~G.~Kuz'menkov, N.~A.~Maleev, N.~N.~Ledentsov, V.~M.~Ustinov, D.~Bimberg
\paper Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 1
\pages 81--87
\mathnet{http://mi.mathnet.ru/phts7488}
\elib{https://elibrary.ru/item.asp?id=21310698}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 1
\pages 77--82
\crossref{https://doi.org/10.1134/S1063782614010072}
Linking options:
  • https://www.mathnet.ru/eng/phts7488
  • https://www.mathnet.ru/eng/phts/v48/i1/p81
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025