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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1, Pages 104–108 (Mi phts7492)  
This article is cited in 5 scientific papers (total in 5 papers)

Materials of the 3rd Symposium "Semiconductor Lasers: Physics and Technology" (St. Petersburg, October 13-16, 2012)

Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

V. P. Konyaev, A. A. Marmalyuk, M. A. Ladugin, T. A. Bagaev, M. V. Zverkov, V. V. Krichevskii, A. A. Padalitsa, S. M. Sapozhnikov, V. A. Simakov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Full-text PDF (248 kB) Citations (5)
Abstract: The results of studying single laser diodes and arrays in the spectral range of 900–1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated heterostructures allows the development of laser emitters with increased power and brightness, operating in the short pulse mode. The results of studying the characteristics of laser-diode arrays (LDAs) fabricated using these heterostructures are presented.
Received: 01.06.2013
Accepted: 16.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 1, Pages 99–103
DOI: https://doi.org/10.1134/S1063782614010175
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. P. Konyaev, A. A. Marmalyuk, M. A. Ladugin, T. A. Bagaev, M. V. Zverkov, V. V. Krichevskii, A. A. Padalitsa, S. M. Sapozhnikov, V. A. Simakov, “Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 104–108; Semiconductors, 48:1 (2014), 99–103
Citation in format AMSBIB
\Bibitem{KonMarLad14}
\by V.~P.~Konyaev, A.~A.~Marmalyuk, M.~A.~Ladugin, T.~A.~Bagaev, M.~V.~Zverkov, V.~V.~Krichevskii, A.~A.~Padalitsa, S.~M.~Sapozhnikov, V.~A.~Simakov
\paper Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 1
\pages 104--108
\mathnet{http://mi.mathnet.ru/phts7492}
\elib{https://elibrary.ru/item.asp?id=21310702}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 1
\pages 99--103
\crossref{https://doi.org/10.1134/S1063782614010175}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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