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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1, Pages 109–113 (Mi phts7493)  
This article is cited in 2 scientific papers (total in 2 papers)

Materials of the 3rd Symposium "Semiconductor Lasers: Physics and Technology" (St. Petersburg, October 13-16, 2012)

Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm

V. V. Bezotosnyi, V. A. Oleshchenko, E. A. Cheshev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Full-text PDF (414 kB) Citations (2)
Abstract: The output characteristics of high-power laser diodes for a wavelength of 808 nm, which were fabricated on the basis of GaAsP/AlGaAs/GaAs strained heterostructures and discarded due to the results of initial measurement, are measured experimentally. Methods for restoration of their radiative parameters to the level of the best samples are found. Possible causes of the observed phenomena are discussed.
Received: 01.06.2013
Accepted: 16.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 1, Pages 104–108
DOI: https://doi.org/10.1134/S1063782614010059
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Bezotosnyi, V. A. Oleshchenko, E. A. Cheshev, “Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 109–113; Semiconductors, 48:1 (2014), 104–108
Citation in format AMSBIB
\Bibitem{BezOleChe14}
\by V.~V.~Bezotosnyi, V.~A.~Oleshchenko, E.~A.~Cheshev
\paper Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 1
\pages 109--113
\mathnet{http://mi.mathnet.ru/phts7493}
\elib{https://elibrary.ru/item.asp?id=21310703}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 1
\pages 104--108
\crossref{https://doi.org/10.1134/S1063782614010059}
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  • https://www.mathnet.ru/eng/phts/v48/i1/p109
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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