Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation

Theoretical and experimental investigations of the average value of the nonequilibrium concentration of free carriers in a semiconductor under periodic optical excitation are carried out. The dependence of the average value of the free-carrier concentration (the average stored energy) on the frequency of excitation-radiation modulation is found at the constant average excitation intensity. The systematic features in the behavior of the average value of the photoconductivity on the frequency of the excitation-radiation modulation depending on the recombination law are established. A new method for determination of the recombination law in a semiconductor independent of the light-pulse shape is proposed for a number of cases. The obtained conclusions can be used to study relaxation processes of a different nature.