Effect of ion doping on the dislocation-related photoluminescence in Si$^+$-implanted silicon

The study is concerned with the effect of the additional implantation of Si samples with С$^+$, О$^+$, В$^+$, Р$^+$, and Ge$^+$ impurity ions followed by annealing at 800$^\circ$C on the behavior of the dislocation photoluminescence line D1, induced in the samples by implantation with Si$^+$ ions at a stabilized temperature followed by annealing in an oxidizing Cl-containing atmosphere. It is established that the intensity of the D1 line strongly depends on the type of incorporated atoms and the dose of additional implantation. An increase in the D1 line intensity is observed upon implantation with oxygen and boron; at the same time, in other cases, the D1 luminescence line is found to be quenched. The mechanisms of such behavior, specifically, the role of oxygen and its interaction with implanted impurities are discussed.