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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 2, Pages 229–231 (Mi phts7516)  

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields

È. P. Sinyavskiia, S. A. Karapetyanb

a Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
b Taras Shevchenko Transnistria State University, Tiraspol
Full-text PDF (136 kB) Citations (2)
Abstract: The effect of an electric field $\mathbf{E}$ orthogonal to the quantum-wire axis and a magnetic field $\mathbf{H}(\mathbf{H}\perp\mathbf{E}, \mathbf{H}\parallel\mathbf{E})$ on conductivity is studied within the context of the parabolic potential model. It is shown that, if the interaction of charge carriers with the rough surface of the nanostructure is taken into account, the charge-carrier mobility $\mu$ as a function of increasing $E$ is described by an unsteady oscillating curve. A physical interpretation of such behavior of $\mu$ with $E$ is proposed. The specific features of mobility in a transverse magnetic field are discussed.
Received: 17.04.2013
Accepted: 21.05.2013
English version:
Semiconductors, 2014, Volume 48, Issue 2, Pages 216–218
DOI: https://doi.org/10.1134/S1063782614020250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: È. P. Sinyavskii, S. A. Karapetyan, “Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 229–231; Semiconductors, 48:2 (2014), 216–218
Citation in format AMSBIB
\Bibitem{SinKar14}
\by \`E.~P.~Sinyavskii, S.~A.~Karapetyan
\paper Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 2
\pages 229--231
\mathnet{http://mi.mathnet.ru/phts7516}
\elib{https://elibrary.ru/item.asp?id=21310726}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 2
\pages 216--218
\crossref{https://doi.org/10.1134/S1063782614020250}
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  • https://www.mathnet.ru/eng/phts/v48/i2/p229
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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