Effect of bremsstrahlung $\gamma$-ray photons and neutrons on the parameters of indium-selenium photoconverters

The effect of Bremsstrahlung $\gamma$-ray photons and neutrons (effective energy $E_{\mathrm{eff}}$ = 8 MeV) with fluences of 10$^{12}$–10$^{13}$ neutron/cm$^2$ on the electrical and photoelectric parameters of layered $p$–$n$-InSe is studied for the first time. Even at the highest radiation fluence, an improvement in the current-voltage characteristics and an increase in the open-circuit voltage at an insignificant decrease in the short-circuit current are observed. Significant variations in the spectral curve of the photoresponse are not detected in general. At the same time, even the initial stage of irradiation gives rise to a pronounced degradation of the parameters of the test silicon solar cells. This fact makes it possible to recommend the photodiodes under study for use as radiation-resistant photodetectors.