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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 2, Pages 259–264 (Mi phts7522)  
This article is cited in 17 scientific papers (total in 17 papers)

Semiconductor physics

Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy

A. V. Solomonova, S. A. Tarasova, E. A. Men'kovicha, I. A. Lamkina, S. Yu. Kurinb, A. A. Antipovb, I. S. Barashb, A. D. Roenkovb, H. Helavab, Yu. N. Makarovb

a Saint Petersburg Electrotechnical University "LETI"
b Nitride Crystals Group, St.-Petersburg
Full-text PDF (674 kB) Citations (17)
Abstract: The results of work on developing and studying ultraviolet (UV) light-emitting diodes (LEDs) based on GaN/AlGaN heterostructures fabricated on Al$_2$O$_3$(0001) substrates by the chloride-hydride vaporphase epitaxy are presented. The maximum in the electroluminescence spectrum is located in the wavelength range of 360–365 nm, and its full width at half maximum is 10–13 nm. At a working current of 20 mA, the optical density and efficiency of the UV LED are 1.14 mW and 1.46%, respectively.
Received: 29.05.2013
Accepted: 04.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 2, Pages 245–250
DOI: https://doi.org/10.1134/S1063782614020262
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Solomonov, S. A. Tarasov, E. A. Men'kovich, I. A. Lamkin, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, H. Helava, Yu. N. Makarov, “Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 259–264; Semiconductors, 48:2 (2014), 245–250
Citation in format AMSBIB
\Bibitem{SolTarMen14}
\by A.~V.~Solomonov, S.~A.~Tarasov, E.~A.~Men'kovich, I.~A.~Lamkin, S.~Yu.~Kurin, A.~A.~Antipov, I.~S.~Barash, A.~D.~Roenkov, H.~Helava, Yu.~N.~Makarov
\paper Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 2
\pages 259--264
\mathnet{http://mi.mathnet.ru/phts7522}
\elib{https://elibrary.ru/item.asp?id=21310732}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 2
\pages 245--250
\crossref{https://doi.org/10.1134/S1063782614020262}
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  • https://www.mathnet.ru/eng/phts/v48/i2/p259
    • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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