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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 2, Pages 265–271
(Mi phts7523)
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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
Synthesis of thin $p$-type rutile films
V. M. Ievlevab, S. B. Kushchevab, O. V. Ovchinnikova, M. P. Sumetsa, A. N. Latysheva, M. N. Bezryadina, L. Yu. Leonovaa, S. V. Kannykinab, A. M. Vozgorkova, M. S. Smirnova a Voronezh State University
b Voronezh State Technical University
Abstract:
The structure and electrical and optical properties of heterostructures formed on the surface of single-crystal silicon wafers as a result of the heat treatment and pulsed photon treatment of Ti films in oxygen, air, and nitrogen are investigated. It is shown that a TiO$_2$/Ti$_5$Si$_3$/$p$-Si heterostructure is formed upon heat treatment in air, whereas a TiO$_2$/TiSi$_2$/$p$-Si heterostructure is formed upon photon treatment. It is established that rutile films with pronounced $n$-type conductivity are formed as a result of the heat treatment of Ni-doped Ti films in oxygen. Rutile films with $p$-type conductivity are formed upon the thermal annealing of Ti films in air with subsequent photon treatment in nitrogen.
Received: 28.02.2013 Accepted: 26.03.2013
Citation:
V. M. Ievlev, S. B. Kushchev, O. V. Ovchinnikov, M. P. Sumets, A. N. Latyshev, M. N. Bezryadin, L. Yu. Leonova, S. V. Kannykin, A. M. Vozgorkov, M. S. Smirnov, “Synthesis of thin $p$-type rutile films”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 265–271; Semiconductors, 48:2 (2014), 251–256
Linking options:
https://www.mathnet.ru/eng/phts7523 https://www.mathnet.ru/eng/phts/v48/i2/p265
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