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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 3, Pages 302–307
(Mi phts7529)
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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu$_{1-x}$Zn$_x$InS$_2$ alloy
A. V. Novosada, V. V. Bozhkoa, G. E. Davydyuka, O. V. Parasyuka, O. R. Gerasymyka, N. Vainoriusb, A. Sakavichusb, V. Janonisb, V. Kazhukauskasb a Lesya Ukrainka East European National University
b Vilnius University, Vilnius
Abstract:
The growth technology of single crystals of Cu$_{1-x}$Zn$_x$InS$_2$ alloys ($x$ = 0 – 12) of $n$-type conductivity is developed. The formation mechanism of the alloy is investigated by X-ray structural analysis. It is shown that the single crystals have chalcopyrite structure, and the unit-cell parameters depend on the alloy composition. The temperature dependence of the electrical conductivity in the temperature range $T$ = 27–300 K and the spectral distribution of the photoconductivity at $T\approx$ 30 K are investigated. Induced photoconductivity is found for CuInS$_2$–ZnIn$_2$S$_4$ with a content of $\sim$ 8 and $\sim$ 12 mol% ZnIn$_2$S$_4$ and thermally stimulated currents are investigated.
Received: 28.03.2013 Accepted: 15.04.2013
Citation:
A. V. Novosad, V. V. Bozhko, G. E. Davydyuk, O. V. Parasyuk, O. R. Gerasymyk, N. Vainorius, A. Sakavichus, V. Janonis, V. Kazhukauskas, “Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu$_{1-x}$Zn$_x$InS$_2$ alloy”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 302–307; Semiconductors, 48:3 (2014), 286–291
Linking options:
https://www.mathnet.ru/eng/phts7529 https://www.mathnet.ru/eng/phts/v48/i3/p302
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