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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 3, Pages 358–363 (Mi phts7538)  
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Study of the electrical properties of individual (Ga,Mn)As nanowires

A. D. Bouravlevab, N. V. Sibirevabc, E. P. Gilsteinac, P. N. Brunkovac, I. S. Mukhindc, M. Tchernychevae, A. I. Khrebtovc, Yu. B. Samsonenkoa, G. È. Cirlinab

a Ioffe Institute, St. Petersburg
b Saint Petersburg State University
c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
e Institut d’Electronique Fondamentale UMR CNRS 8622, UniversitéParis Sud 11, 91405 Orsay Cedex, France
Full-text PDF (524 kB) Citations (2)
Abstract: Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160$^\circ$C. It is found that an increase in the annealing temperature yields structure degradation. From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined.
Received: 17.07.2013
Accepted: 19.08.2013
English version:
Semiconductors, 2014, Volume 48, Issue 3, Pages 344–349
DOI: https://doi.org/10.1134/S1063782614030075
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. D. Bouravlev, N. V. Sibirev, E. P. Gilstein, P. N. Brunkov, I. S. Mukhin, M. Tchernycheva, A. I. Khrebtov, Yu. B. Samsonenko, G. È. Cirlin, “Study of the electrical properties of individual (Ga,Mn)As nanowires”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 358–363; Semiconductors, 48:3 (2014), 344–349
Citation in format AMSBIB
\Bibitem{BouSibGil14}
\by A.~D.~Bouravlev, N.~V.~Sibirev, E.~P.~Gilstein, P.~N.~Brunkov, I.~S.~Mukhin, M.~Tchernycheva, A.~I.~Khrebtov, Yu.~B.~Samsonenko, G.~\`E.~Cirlin
\paper Study of the electrical properties of individual (Ga,Mn)As nanowires
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 3
\pages 358--363
\mathnet{http://mi.mathnet.ru/phts7538}
\elib{https://elibrary.ru/item.asp?id=21310748}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 3
\pages 344--349
\crossref{https://doi.org/10.1134/S1063782614030075}
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  • https://www.mathnet.ru/eng/phts/v48/i3/p358
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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