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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 3, Pages 364–368 (Mi phts7539)  
Micro- and nanocrystalline, porous, composite semiconductors

On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum

M. G. Mynbaevaa, S. P. Lebedeva, A. A. Lavrent'eva, K. J. Mynbaevab, A. A. Golovatenkoabc, A. A. Lebedeva, V. I. Nikolaevabc

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Perfect Crystals LLC, Saint-Petersburg
Full-text PDF (1317 kB)
Abstract: The self-organized structuring of the surface of single-crystal silicon wafers under high-frequency annealing in a carbon-containing atmosphere is reported. The effect can be used to develop new maskless methods for the fabrication of structured materials for different functional purposes.
Received: 17.07.2013
Accepted: 19.08.2013
English version:
Semiconductors, 2014, Volume 48, Issue 3, Pages 350–353
DOI: https://doi.org/10.1134/S106378261403018X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. G. Mynbaeva, S. P. Lebedev, A. A. Lavrent'ev, K. J. Mynbaev, A. A. Golovatenko, A. A. Lebedev, V. I. Nikolaev, “On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 364–368; Semiconductors, 48:3 (2014), 350–353
Citation in format AMSBIB
\Bibitem{MynLebLav14}
\by M.~G.~Mynbaeva, S.~P.~Lebedev, A.~A.~Lavrent'ev, K.~J.~Mynbaev, A.~A.~Golovatenko, A.~A.~Lebedev, V.~I.~Nikolaev
\paper On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 3
\pages 364--368
\mathnet{http://mi.mathnet.ru/phts7539}
\elib{https://elibrary.ru/item.asp?id=21310749}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 3
\pages 350--353
\crossref{https://doi.org/10.1134/S106378261403018X}
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