Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions

Experimental samples of semiconductor heterostructures with GaP$_{1-x}$N$_x$ layers and In$_{1-x-y}$GaP$_y$N$_x$ and GaP$_y$N$_x$As$_{1-x-y}$ quantum wells are synthesized by molecular beam epitaxy on GaP (001) substrates. The structural properties of the samples are investigated by X-ray diffraction and the molar fraction x of nitrogen in the GaP$_{1-x}$N$_x$ layers is determined. To compare the structural and optical properties of the samples, the photoluminescence of epitaxial GaP$_{1-x}$N$_x$ layers and heterostructures with InGaPN and GaPAsN quantum wells with GaPN barriers is studied. The photoluminescence and X-ray diffraction data on the GaP$_{1-x}$N$_x$ samples are compared with parameters calculated within the band anticrossing model. Based on the experimental and calculated data, it is concluded that the hybridization parameter is not constant and depends on the molar fraction of nitrogen.