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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 442–447
(Mi phts7554)
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This article is cited in 5 scientific papers (total in 5 papers)
Electronic properties of semiconductors
On the polarization caused by bulk charges and the ionic conductivity in TlInSe$_2$ crystals
R. M. Sardarlya, O. A. Samedova, N. A. Aliyevaa, A. P. Abdullayeva, E. K. Huseynovb, I. S. Hasanovb, F. T. Salmanova a Institute of radiation problems, ANAS
b Institute of Physics Azerbaijan Academy of Sciences
Abstract:
TlInSe$_2$ crystals are investigated in dc and ac electric fields in the temperature range of 100–400 K. A decrease in the electrical conductivity $\sigma$ with time in a dc field is revealed. The complex-impedance spectra $Z^*(f)$ are measured in the frequency range of 10–10$^6$ Hz. Diagrams in the $(Z''-Z')$ complex plane are analyzed using the method of equivalent circuits. It is shown that the electrical properties of TlInSe$_2$ crystals in the investigated ranges of temperatures and frequencies are determined by hopping conductivity and the accumulation of charge carriers near blocking platinum electrodes.
Received: 26.06.2013 Accepted: 05.07.2013
Citation:
R. M. Sardarly, O. A. Samedov, N. A. Aliyeva, A. P. Abdullayev, E. K. Huseynov, I. S. Hasanov, F. T. Salmanov, “On the polarization caused by bulk charges and the ionic conductivity in TlInSe$_2$ crystals”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 442–447; Semiconductors, 48:4 (2014), 427–431
Linking options:
https://www.mathnet.ru/eng/phts7554 https://www.mathnet.ru/eng/phts/v48/i4/p442
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