$p$-GaSb(Ox)/$n$-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

A new non-vacuum technology is proposed and anisotype photosensitive heterojunctions (native oxide of a narrow-gap III–V semiconductor)-(binary compound) $p$-GaSb(Ox)/$n$-GaSb are fabricated for the first time. The developed technological process is based on the surface thermal interaction of a GaSb crystal with components of the normal Earth atmosphere. Based on original physical-technological studies of interaction in the GaSb/(air medium) system, it is found that $p$-GaSb(Ox) native-oxide films obtained in such a way exhibit high adhesion to the surface of the initial gallium antimonide $n$-GaSb. The steady-state current-voltage characteristics and spectral dependences of the relative photoconversion quantum efficiency of the obtained $p$-GaSb(Ox)/$n$-GaSb heterojunctions are first measured. On this basis, the systematic features of charge transport and photosensitivity are discussed. A new possible application of the non-vacuum thermal oxidation of GaSb films in the development of optical radiation photodetectors on substrates of homogeneous gallium antimonide $n$-GaSb crystals is first detected and implemented.