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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 492–497 (Mi phts7564)  
This article is cited in 7 scientific papers (total in 7 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Morphological characteristics of grain boundaries in multicrystalline silicon

S. M. Peshcherova, A. I. Nepomnyashchikh, L. A. Pavlova, I. A. Eliseev, R. V. Presnyakov

Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences
Full-text PDF (803 kB) Citations (7)
Abstract: The structure of multicrystalline silicon and the distribution of the nonequlibrium charge-carrier lifetime over the surface and in the bulk of samples are investigated. Regular dependences of the electrical characteristics on the structure of grains and grain boundaries are established. Grain boundaries in multisilicon grown by the Bridgman–Stockbarger technique from a melt of metallurgical grade silicon are investigated. Metallographic and microscopic descriptions of grain boundaries can be used in fitting the crystallization conditions for growing multisilicon with the perfect structure for solar-power engineering.
Received: 28.03.2013
Accepted: 20.09.2013
English version:
Semiconductors, 2014, Volume 48, Issue 4, Pages 476–480
DOI: https://doi.org/10.1134/S1063782614040228
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. M. Peshcherova, A. I. Nepomnyashchikh, L. A. Pavlova, I. A. Eliseev, R. V. Presnyakov, “Morphological characteristics of grain boundaries in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 492–497; Semiconductors, 48:4 (2014), 476–480
Citation in format AMSBIB
\Bibitem{PesNepPav14}
\by S.~M.~Peshcherova, A.~I.~Nepomnyashchikh, L.~A.~Pavlova, I.~A.~Eliseev, R.~V.~Presnyakov
\paper Morphological characteristics of grain boundaries in multicrystalline silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 4
\pages 492--497
\mathnet{http://mi.mathnet.ru/phts7564}
\elib{https://elibrary.ru/item.asp?id=21310775}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 4
\pages 476--480
\crossref{https://doi.org/10.1134/S1063782614040228}
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  • https://www.mathnet.ru/eng/phts/v48/i4/p492
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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