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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 498–503 (Mi phts7565)  
Semiconductor physics

Long-channel field-effect transistor with short-channel transistor properties

A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

Physical-Technical Institute, Uzbekistan Academy of Sciences
Full-text PDF (289 kB)
Abstract: The typical parameters of samples of long-channel field-effect transistors and the results of measurement of their functional characteristics are presented. The possible distributions of the carrier mobility over the channel thickness are considered. The current-voltage characteristics of long-channel field-effect transistors with an arbitrary doping profile and carrier-mobility gradient are theoretically analyzed taking into account carrier velocity saturation.
Received: 12.11.2012
Accepted: 04.04.2013
English version:
Semiconductors, 2014, Volume 48, Issue 4, Pages 481–486
DOI: https://doi.org/10.1134/S1063782614040137
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev, “Long-channel field-effect transistor with short-channel transistor properties”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 498–503; Semiconductors, 48:4 (2014), 481–486
Citation in format AMSBIB
\Bibitem{KarYodAbd14}
\by A.~V.~Karimov, D.~M.~Yodgorova, O.~A.~Abdulkhaev
\paper Long-channel field-effect transistor with short-channel transistor properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 4
\pages 498--503
\mathnet{http://mi.mathnet.ru/phts7565}
\elib{https://elibrary.ru/item.asp?id=21310776}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 4
\pages 481--486
\crossref{https://doi.org/10.1134/S1063782614040137}
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