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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 504–508 (Mi phts7566)  
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor physics

Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe

V. V. Brusab, M. I. Ilashschuka, I. G. Orletskiia, P. D. Mar'yanchuka, K. S. Ulyanytskya

a Chernivtsi National University named after Yuriy Fedkovych
b Helmholtz-Zentrum Berlin für Materialien und Energie, D-12489 Berlin, Germany
Full-text PDF (279 kB) Citations (6)
Abstract: In/TiO$_2$/$p$-CdTe MOS diodes, which have a rectification coefficient of $K$ = 6 $\times$ 10$^3$ at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO$_2$/$p$-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO$_2$ high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.
Received: 21.03.2013
Accepted: 01.04.2013
English version:
Semiconductors, 2014, Volume 48, Issue 4, Pages 487–491
DOI: https://doi.org/10.1134/S1063782614040071
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Brus, M. I. Ilashschuk, I. G. Orletskii, P. D. Mar'yanchuk, K. S. Ulyanytsky, “Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 504–508; Semiconductors, 48:4 (2014), 487–491
Citation in format AMSBIB
\Bibitem{BruIlaOrl14}
\by V.~V.~Brus, M.~I.~Ilashschuk, I.~G.~Orletskii, P.~D.~Mar'yanchuk, K.~S.~Ulyanytsky
\paper Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 4
\pages 504--508
\mathnet{http://mi.mathnet.ru/phts7566}
\elib{https://elibrary.ru/item.asp?id=21310777}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 4
\pages 487--491
\crossref{https://doi.org/10.1134/S1063782614040071}
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  • https://www.mathnet.ru/eng/phts/v48/i4/p504
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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