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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 518–522 (Mi phts7569)  

This article is cited in 8 scientific papers (total in 8 papers)

Semiconductor physics

Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys

A. V. Babichevab, A. Lazarenkoa, E. V. Nikitinaa, E. V. Pirogova, M. S. Soboleva, A. Yu. Egorova

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
Full-text PDF (355 kB) Citations (8)
Abstract: In this paper, we present the results of the white light-emitting diodes (LEDs) construction based on GaPAsN semiconductor alloys on a GaP substrate. Heterostructure electroluminescence with a continuous emission spectrum in the range from 350 nm to 1050 nm is observed. The output of light through the side walls and the face side of the sample enabled us to achieve white light emission by means of ultra-wide electroluminescence spectrum covering all visible spectrum and part of the near IR spectral range. While extracting emission through substrate, the short-wavelength part of the visible spectra is absorbed at GaP layer.
Received: 23.07.2013
Accepted: 19.08.2013
English version:
Semiconductors, 2014, Volume 48, Issue 4, Pages 501–504
DOI: https://doi.org/10.1134/S106378261404006X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Babichev, A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 518–522; Semiconductors, 48:4 (2014), 501–504
Citation in format AMSBIB
\Bibitem{BabLazNik14}
\by A.~V.~Babichev, A.~Lazarenko, E.~V.~Nikitina, E.~V.~Pirogov, M.~S.~Sobolev, A.~Yu.~Egorov
\paper Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 4
\pages 518--522
\mathnet{http://mi.mathnet.ru/phts7569}
\elib{https://elibrary.ru/item.asp?id=21310780}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 4
\pages 501--504
\crossref{https://doi.org/10.1134/S106378261404006X}
Linking options:
  • https://www.mathnet.ru/eng/phts7569
  • https://www.mathnet.ru/eng/phts/v48/i4/p518
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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