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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 518–522
(Mi phts7569)
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This article is cited in 8 scientific papers (total in 8 papers)
Semiconductor physics
Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
A. V. Babichevab, A. Lazarenkoa, E. V. Nikitinaa, E. V. Pirogova, M. S. Soboleva, A. Yu. Egorova a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
Abstract:
In this paper, we present the results of the white light-emitting diodes (LEDs) construction based on GaPAsN semiconductor alloys on a GaP substrate. Heterostructure electroluminescence with a continuous emission spectrum in the range from 350 nm to 1050 nm is observed. The output of light through the side walls and the face side of the sample enabled us to achieve white light emission by means of ultra-wide electroluminescence spectrum covering all visible spectrum and part of the near IR spectral range. While extracting emission through substrate, the short-wavelength part of the visible spectra is absorbed at GaP layer.
Received: 23.07.2013 Accepted: 19.08.2013
Citation:
A. V. Babichev, A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 518–522; Semiconductors, 48:4 (2014), 501–504
Linking options:
https://www.mathnet.ru/eng/phts7569 https://www.mathnet.ru/eng/phts/v48/i4/p518
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