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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 535–538 (Mi phts7572)  
This article is cited in 11 scientific papers (total in 11 papers)

Manufacturing, processing, testing of materials and structures

Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation

A. A. Shemukhina, Yu. V. Balakshinab, V. S. Chernyshab, S. A. Golubkovc, N. N. Egorovc, A. I. Sidorovc

a Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
b Lomonosov Moscow State University, Faculty of Physics
c Research Institute of Materials Science and Technology, Zelenograd
Full-text PDF (258 kB) Citations (11)
Abstract: The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si$^+$ ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed.
Received: 04.06.2013
Accepted: 19.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 4, Pages 517–520
DOI: https://doi.org/10.1134/S1063782614040265
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, “Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 535–538; Semiconductors, 48:4 (2014), 517–520
Citation in format AMSBIB
\Bibitem{SheBalChe14}
\by A.~A.~Shemukhin, Yu.~V.~Balakshin, V.~S.~Chernysh, S.~A.~Golubkov, N.~N.~Egorov, A.~I.~Sidorov
\paper Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 4
\pages 535--538
\mathnet{http://mi.mathnet.ru/phts7572}
\elib{https://elibrary.ru/item.asp?id=21310783}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 4
\pages 517--520
\crossref{https://doi.org/10.1134/S1063782614040265}
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  • https://www.mathnet.ru/eng/phts/v48/i4/p535
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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