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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4, Pages 570–575 (Mi phts7577)  

This article is cited in 5 scientific papers (total in 5 papers)

Manufacturing, processing, testing of materials and structures

Specific features of the sol–gel formation and optical properties of 3$d$ metal/porous silicon composites

A. S. Len'shina, P. V. Seredina, D. A. Minakova, V. M. Kashkarova, B. L. Agapova, È. P. Domashevskayaa, I. E. Kononovab, V. A. Moshnikovb, N. S. Terebovac, I. N. Shabanovac

a Voronezh State University
b Saint Petersburg Electrotechnical University "LETI"
c Physical-Technical Institute of the Ural Branch of the Russian Academy of Sciences
Abstract: The composition and optical properties of composite materials based on porous silicon with iron, cobalt, and nickel deposited by the sol–gel technique are studied. It is shown that the deposition of metal-oxide films onto the surface of porous silicon enables stabilization of the photoluminescence and an increase in its intensity, as well as the storage of hydrogen in the porous layer.
Received: 01.04.2013
Accepted: 08.04.2013
English version:
Semiconductors, 2014, Volume 48, Issue 4, Pages 551–555
DOI: https://doi.org/10.1134/S1063782614040174
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Len'shin, P. V. Seredin, D. A. Minakov, V. M. Kashkarov, B. L. Agapov, È. P. Domashevskaya, I. E. Kononova, V. A. Moshnikov, N. S. Terebova, I. N. Shabanova, “Specific features of the sol–gel formation and optical properties of 3$d$ metal/porous silicon composites”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 570–575; Semiconductors, 48:4 (2014), 551–555
Citation in format AMSBIB
\Bibitem{LenSerMin14}
\by A.~S.~Len'shin, P.~V.~Seredin, D.~A.~Minakov, V.~M.~Kashkarov, B.~L.~Agapov, \`E.~P.~Domashevskaya, I.~E.~Kononova, V.~A.~Moshnikov, N.~S.~Terebova, I.~N.~Shabanova
\paper Specific features of the sol--gel formation and optical properties of 3$d$ metal/porous silicon composites
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 4
\pages 570--575
\mathnet{http://mi.mathnet.ru/phts7577}
\elib{https://elibrary.ru/item.asp?id=21310788}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 4
\pages 551--555
\crossref{https://doi.org/10.1134/S1063782614040174}
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  • https://www.mathnet.ru/eng/phts/v48/i4/p570
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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