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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 5, Pages 577–581
(Mi phts7578)
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This article is cited in 4 scientific papers (total in 4 papers)
Electronic properties of semiconductors
Thermal expansion and thermal conductivity of In$_2$S$_3$ and CuIn$_5$S$_8$ compounds and
(CuIn$_5$S$_8$)$_{1-x}$(In$_2$S$_3$)$_x$ alloys
I. V. Bondar' Belarussian State University of Computer Science and Radioelectronic Engineering
Abstract:
Thermal expansion and thermal conductivity are studied in the respective temperature ranges 80–600 and 300–600 K for In$_2$S$_3$ and CuIn$_5$S$_8$ single-crystal compounds and (CuIn$_5$S$_8$)$_{1-x}$(In$_2$S$_3$)$_x$ alloys grown by planar crystallization of the melt (the vertical Bridgman method). From the data, the thermal-expansion coefficient $\alpha_L$ is calculated. The dependences of the thermal-expansion coefficient $\alpha_L$ and the thermal conductivity $\chi$ on the composition parameter $x$ are constructed. It is established that $\alpha_L$ linearly varies with $x$, whereas $\chi$ has a minimum at intermediate values of $x$.
Received: 18.06.2013 Accepted: 19.08.2013
Citation:
I. V. Bondar', “Thermal expansion and thermal conductivity of In$_2$S$_3$ and CuIn$_5$S$_8$ compounds and
(CuIn$_5$S$_8$)$_{1-x}$(In$_2$S$_3$)$_x$ alloys”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 577–581
Linking options:
https://www.mathnet.ru/eng/phts7578 https://www.mathnet.ru/eng/phts/v48/i5/p577
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