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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 5, Pages 597–603 (Mi phts7581)  
This article is cited in 6 scientific papers (total in 6 papers)

Electronic properties of semiconductors

Influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films

H. Ph. Nguyena, S. A. Kozyukhina, A. B. Pevtsovb

a Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
b Ioffe Institute, St. Petersburg
Full-text PDF (422 kB) Citations (6)
Abstract: Chalcogenide alloys in the Ge–Sb–Te system are promising for application in phase-change memory devices. We investigated the influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films and established that the bismuth doping in them allows the optical contrast of the thin films to be increased by about 30% at a wavelength of 400 nm. The experimental results are explained in an assumption on the impurity substitution of bismuth for antimony.
Received: 15.10.2013
Accepted: 18.10.2013
English version:
Semiconductors, 2014, Volume 48, Issue 5, Pages 577–583
DOI: https://doi.org/10.1134/S1063782614050169
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: H. Ph. Nguyen, S. A. Kozyukhin, A. B. Pevtsov, “Influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 597–603; Semiconductors, 48:5 (2014), 577–583
Citation in format AMSBIB
\Bibitem{NguKozPev14}
\by H.~Ph.~Nguyen, S.~A.~Kozyukhin, A.~B.~Pevtsov
\paper Influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 5
\pages 597--603
\mathnet{http://mi.mathnet.ru/phts7581}
\elib{https://elibrary.ru/item.asp?id=22018832}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 5
\pages 577--583
\crossref{https://doi.org/10.1134/S1063782614050169}
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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