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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 5, Pages 636–638
(Mi phts7587)
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This article is cited in 13 scientific papers (total in 13 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Heat capacity of hexagonal boron nitride sheet in Holstein model
Hamze Mousaviab a Department of Physics, Razi University, Kermanshah, Iran
b Nano Science and Nano Technology Research Center, Razi University,
Kermanshah, Iran
Abstract:
The effects of electron-phonon interaction on the electronic heat capacity of hexagonal boron nitride plane are investigated within the Holstein Hamiltonian model and Green's function formalism. By using different electron-phonon coupling constants of boron and nitrogen sublattices, it is found that the specific heat has different behaviors in two temperature regions. In the low temperature region, the electron-phonon interaction causes the enhancement of specific heat due to decreasing the band gap, while heat capacity reduces in the high temperature region because of decreasing the excitation spectrum.
Received: 22.11.2012 Accepted: 26.08.2013
Citation:
Hamze Mousavi, “Heat capacity of hexagonal boron nitride sheet in Holstein model”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 636–638; Semiconductors, 48:5 (2014), 617–620
Linking options:
https://www.mathnet.ru/eng/phts7587 https://www.mathnet.ru/eng/phts/v48/i5/p636
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