Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 5, Pages 648–653 (Mi phts7590)  
This article is cited in 11 scientific papers (total in 11 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium

V. M. Grabova, E. V. Demidova, V. A. Komarova, D. Yu. Matveeva, A. A. Nikolaevab, D. S. Markusheva, E. V. Konstantinova, E. E. Konstantinovaa

a Herzen State Pedagogical University of Russia, St. Petersburg
b Gitsu Institute of Electronic Engineering and Nanotechnologies
Full-text PDF (203 kB) Citations (11)
Abstract: The results of experimental investigation of galvanomagnetic phenomena in single-crystalline and block films of tellurium-doped bismuth in the temperature range of 77–300 K and in the film-thickness range of 0.1–1 $\mu$m are presented. It is shown that the charge-carrier concentration in the investigated films is independent of thickness, the charge carriers are scattered at phonons, the film surface, structural defects, and crystallite boundaries. The values and ratio of the listed contributions to the restriction of charge-carrier mobility depend on the tellurium content, film thickness, and also their single-crystalline or block state.
Received: 05.09.2013
Accepted: 12.09.2013
English version:
Semiconductors, 2014, Volume 48, Issue 5, Pages 630–635
DOI: https://doi.org/10.1134/S106378261405008X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. M. Grabov, E. V. Demidov, V. A. Komarov, D. Yu. Matveev, A. A. Nikolaeva, D. S. Markushev, E. V. Konstantinov, E. E. Konstantinova, “Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 648–653; Semiconductors, 48:5 (2014), 630–635
Citation in format AMSBIB
\Bibitem{GraDemKom14}
\by V.~M.~Grabov, E.~V.~Demidov, V.~A.~Komarov, D.~Yu.~Matveev, A.~A.~Nikolaeva, D.~S.~Markushev, E.~V.~Konstantinov, E.~E.~Konstantinova
\paper Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 5
\pages 648--653
\mathnet{http://mi.mathnet.ru/phts7590}
\elib{https://elibrary.ru/item.asp?id=22018842}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 5
\pages 630--635
\crossref{https://doi.org/10.1134/S106378261405008X}
Linking options:
  • https://www.mathnet.ru/eng/phts7590
  • https://www.mathnet.ru/eng/phts/v48/i5/p648
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025