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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6, Pages 742–746 (Mi phts7606)  
This article is cited in 2 scientific papers (total in 2 papers)

Surface, interfaces, thin films

Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field

V. A. Makaraa, L. P. Steblenkoa, O. A. Korotchenkova, A. B. Nadtochiia, D. V. Kalinichenkoa, A. N. Kurilyuka, Yu. L. Kobzar'a, A. N. Kritb, S. N. Naumenkoa

a National Taras Shevchenko University of Kyiv, Faculty of Physics
b Scientific Investigation Center "Physicochemical materials", Taras Shevchenko Kyiv National University, and the National Academy of Sciences of Ukraine, Kyiv, 01601, Ukraine
Full-text PDF (897 kB) Citations (2)
Abstract: The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible character.
Received: 04.07.2013
Accepted: 23.09.2013
English version:
Semiconductors, 2014, Volume 48, Issue 6, Pages 722–726
DOI: https://doi.org/10.1134/S1063782614060189
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Makara, L. P. Steblenko, O. A. Korotchenkov, A. B. Nadtochii, D. V. Kalinichenko, A. N. Kurilyuk, Yu. L. Kobzar', A. N. Krit, S. N. Naumenko, “Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 742–746; Semiconductors, 48:6 (2014), 722–726
Citation in format AMSBIB
\Bibitem{MakSteKor14}
\by V.~A.~Makara, L.~P.~Steblenko, O.~A.~Korotchenkov, A.~B.~Nadtochii, D.~V.~Kalinichenko, A.~N.~Kurilyuk, Yu.~L.~Kobzar', A.~N.~Krit, S.~N.~Naumenko
\paper Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 6
\pages 742--746
\mathnet{http://mi.mathnet.ru/phts7606}
\elib{https://elibrary.ru/item.asp?id=22018858}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 6
\pages 722--726
\crossref{https://doi.org/10.1134/S1063782614060189}
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  • https://www.mathnet.ru/eng/phts/v48/i6/p742
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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