On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate

Experimental results obtained upon the growth of InAs$_{1-x-y}$Sb$_y$P$_x$ multicomponent solid solutions with 0.43 $< x <$ 0.72 by metal-organic vapor-phase epitaxy at low deposition temperatures ($T<$ 520$^\circ$C) with a metal-organic source of arsenic are presented. A model is suggested for describing the growth of an InAsSbP epitaxial layer that is isomorphic with the InAs substrate at a given ratio between the phosphorus and antimony concentrations in the solid phase.