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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6, Pages 759–762
(Mi phts7609)
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This article is cited in 2 scientific papers (total in 2 papers)
Surface, interfaces, thin films
Properties of TiO$_2$ films on silicon substrate
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tsupiy, T. M. Yaskevich Siberian Physical-Technical Institute of the Tomsk State University
Abstract:
Influence of the substrate material and the effect of oxygen plasma on the microprofile and electrical properties of TiO$_2$ films deposited by radio-frequency magnetron sputtering are studied. It is shown that the most continuous films with the smallest roughness are obtained when deposited onto silicon substrates. The change in the capacitance-voltage and conductance-voltage characteristics of the structures upon their exposure to oxygen plasma is accounted for by the diffusion of oxygen atoms across the titanium-dioxide film and by the appearance of a SiO$_2$ layer at the Si–TiO$_2$ interface.
Received: 10.09.2013 Accepted: 21.09.2013
Citation:
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tsupiy, T. M. Yaskevich, “Properties of TiO$_2$ films on silicon substrate”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 759–762; Semiconductors, 48:6 (2014), 739–742
Linking options:
https://www.mathnet.ru/eng/phts7609 https://www.mathnet.ru/eng/phts/v48/i6/p759
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