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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6, Pages 801–804 (Mi phts7627)  
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Features of the spin-lattice relaxation of nuclear spins $^{63,65}$Cu in the CuAlO$_2$ semiconductor compound

V. L. Matukhina, D. A. Shul'gina, S. V. Schmidtb, E. I. Terukovc

a Kazan State Power Engineering University
b Saint Petersburg Electrotechnical University "LETI"
c Ioffe Institute, St. Petersburg
Full-text PDF (154 kB) Citations (2)
Abstract: The results of studying the nuclear spin-lattice relaxation of the nuclear spins of $^{63,65}$Cu in the CuAlO$_2$ semiconductor compound ($T$ = 77, 300 K) by the method of nuclear quadrupole resonance of Cu are presented. The relaxation rates in the CuAlO$_2$ compound contain contributions from the magnetic and quadrupole relaxation mechanisms. The magnetic contribution to the relaxation rate is caused by hyperfine magnetic fields of mobile holes. Comparison of the magnetic contribution to the relaxation rate with electrical conductivity made it possible to estimate the carrier concentration and mobility.
Received: 23.09.2013
Accepted: 27.09.2013
English version:
Semiconductors, 2014, Volume 48, Issue 6, Pages 779–782
DOI: https://doi.org/10.1134/S1063782614060190
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. L. Matukhin, D. A. Shul'gin, S. V. Schmidt, E. I. Terukov, “Features of the spin-lattice relaxation of nuclear spins $^{63,65}$Cu in the CuAlO$_2$ semiconductor compound”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 801–804; Semiconductors, 48:6 (2014), 779–782
Citation in format AMSBIB
\Bibitem{MatShuSch14}
\by V.~L.~Matukhin, D.~A.~Shul'gin, S.~V.~Schmidt, E.~I.~Terukov
\paper Features of the spin-lattice relaxation of nuclear spins $^{63,65}$Cu in the CuAlO$_2$ semiconductor compound
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 6
\pages 801--804
\mathnet{http://mi.mathnet.ru/phts7627}
\elib{https://elibrary.ru/item.asp?id=22018869}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 6
\pages 779--782
\crossref{https://doi.org/10.1134/S1063782614060190}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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