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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6, Pages 814–817 (Mi phts7629)  

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical properties of a SiC–Si multilayer structure

V. B. Bozhevol'nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova

St. Petersburg State University, Faculty of Physics
Abstract: The charge properties of a multilayer structure, composed of silicon-carbide polytypes on a silicon substrate, are investigated. Knowledge of the properties of the space-charge region of silicon and the possibility of affecting the surface of a structure by the field effect [1] provides data on the charge processes at the interfaces between the polytypes. These data are urgent for improving the methods of synthesizing electronic structures based on SiC polytypes.
Received: 14.10.2013
Accepted: 21.10.2013
English version:
Semiconductors, 2014, Volume 48, Issue 6, Pages 792–795
DOI: https://doi.org/10.1134/S1063782614060074
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. B. Bozhevol'nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova, “Electrical properties of a SiC–Si multilayer structure”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 814–817; Semiconductors, 48:6 (2014), 792–795
Citation in format AMSBIB
\Bibitem{BozYafMia14}
\by V.~B.~Bozhevol'nov, A.~M.~Yafyasov, V.~Yu.~Miailovskii, Yu.~V.~Egorova, A.~A.~Sokolov, E.~O.~Filatova
\paper Electrical properties of a SiC--Si multilayer structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 6
\pages 814--817
\mathnet{http://mi.mathnet.ru/phts7629}
\elib{https://elibrary.ru/item.asp?id=22018871}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 6
\pages 792--795
\crossref{https://doi.org/10.1134/S1063782614060074}
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