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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6, Pages 814–817
(Mi phts7629)
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Semiconductor structures, low-dimensional systems, quantum phenomena
Electrical properties of a SiC–Si multilayer structure
V. B. Bozhevol'nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova St. Petersburg State University, Faculty of Physics
Abstract:
The charge properties of a multilayer structure, composed of silicon-carbide polytypes on a silicon substrate, are investigated. Knowledge of the properties of the space-charge region of silicon and the possibility of affecting the surface of a structure by the field effect [1] provides data on the charge processes at the interfaces between the polytypes. These data are urgent for improving the methods of synthesizing electronic structures based on SiC polytypes.
Received: 14.10.2013 Accepted: 21.10.2013
Citation:
V. B. Bozhevol'nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova, “Electrical properties of a SiC–Si multilayer structure”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 814–817; Semiconductors, 48:6 (2014), 792–795
Linking options:
https://www.mathnet.ru/eng/phts7629 https://www.mathnet.ru/eng/phts/v48/i6/p814
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