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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6, Pages 839–844
(Mi phts7634)
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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes
D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, R. N. Kriukov, M. V. Dorokhin, A. V. Kudrin Lobachevsky State University of Nizhny Novgorod
Abstract:
The technique of X-ray photoelectron spectroscopy combined with ion profiling is used for the quantitative chemical analysis of the structure of spin light-emitting diodes with a GaMnAs spin-injection layer and an InGaAs quantum well. The depth distribution of phases is determined, and the causes of redistribution of the phases are clarified. In the spin-injection layer, the fractions of antiferromagnetic Mn and ferromagnetic MnAs are at the same level. The procedure for phase separation and verification of the correctness of determination of the content of components is improved.
Received: 08.10.2013 Accepted: 21.10.2013
Citation:
D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, R. N. Kriukov, M. V. Dorokhin, A. V. Kudrin, “Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 839–844; Semiconductors, 48:6 (2014), 815–820
Linking options:
https://www.mathnet.ru/eng/phts7634 https://www.mathnet.ru/eng/phts/v48/i6/p839
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