On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap $n$-InSb and $n$-CdSnAs$_2$ semiconductors

Experimental baric dependences with a uniform pressure as high as 12 kbar and magnetic-field dependences of resistivity, the Hall coefficient, and transverse magnetic resistance at 77 K at a strength as high as 15 kOe in macroscopically uniform bulk heavily doped and strongly degenerate $n$-InSb and $n$-CdSnAs$_2$ crystals are analyzed. It is established that the transverse magnetic resistance in the studied semiconductors in the region of both weak and classically strong magnetic fields is determined by statistically distributed inhomogeneities.