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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 7, Pages 932–937
(Mi phts7649)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix
S. K. Gubaa, V. N. Yuzevichab a Lviv Polytechnic National University
b G. V. Karpenko Physical-Mechanical Institute of the National Academy of Sciences of Ukraine
Abstract:
A theoretical model for calculating the energy characteristics of surfaces of InAs quantum dots in a GaAs(100) matrix is described. The model is based on notions of nonequilibrium thermodynamics and surface physics. The results of calculating the magnitudes of the surface energy and adhesion physical quantities as well as pressures in the vicinity of the edges of InAs quantum dots in a GaAs(100) matrix are presented. The causes of bending of the profile of the lower part of the quantum dot are presented using the Young relationship. These results can be used to asses the stress-relaxation mechanisms during the course of the selforganization of InAs quantum dots in a GaAs(100) matrix.
Received: 28.03.2013 Accepted: 11.11.2013
Citation:
S. K. Guba, V. N. Yuzevich, “Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 932–937; Semiconductors, 48:7 (2014), 905–910
Linking options:
https://www.mathnet.ru/eng/phts7649 https://www.mathnet.ru/eng/phts/v48/i7/p932
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