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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1014–1016
(Mi phts7660)
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This article is cited in 9 scientific papers (total in 9 papers)
Electronic properties of semiconductors
Specific features of magnetoresistance in overcompensated manganese-doped silicon
M. K. Bakhadyrkhanov, G. Kh. Mavlonov, H. M. Iliev, K. S. Ayupov, O. E. Sattarov, S. A. Tachilin Tashkent State Technical University
Abstract:
It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated $p$-Si$\langle$B, Mn$\rangle$, but also in overcompensated $n$-Si$\langle$B, Mn$\rangle$ with a Fermi level of $F=E_C$ – 0.35eV $\div$ $E_C$ – 0.55 eV. The magnitude and the temperature range of the negative magnetoresistance in materials of this kind are determined by the position of the Fermi level.
Received: 11.11.2013 Accepted: 03.12.2013
Citation:
M. K. Bakhadyrkhanov, G. Kh. Mavlonov, H. M. Iliev, K. S. Ayupov, O. E. Sattarov, S. A. Tachilin, “Specific features of magnetoresistance in overcompensated manganese-doped silicon”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1014–1016; Semiconductors, 48:8 (2014), 986–988
Linking options:
https://www.mathnet.ru/eng/phts7660 https://www.mathnet.ru/eng/phts/v48/i8/p1014
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