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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1017–1023 (Mi phts7661)  
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Deformation paramagnetic defects in Fz-$^{29}$Si:P crystals

O. V. Koplaka, A. I. Dmitrieva, S. G. Vasil'eva, E. A. Steinmanb, S. I. Alekseevc, R. B. Morgunova

a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
b Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
c Eurasian Open Institute, Moscow, 109052, Russia
Full-text PDF (418 kB) Citations (1)
Abstract: A new type of paramagnetic defects generated under plastic deformation (at 1223 K) in isotopically enriched floating-zone-grown silicon crystals Fz-Si:P (76% $^{29}$Si) are found. The anisotropic spectra of the electron-spin resonance of these defects testify that they are of doping origin and have the spin $S$ = 1. The spectra of nuclear magnetic resonance are Pake doublets split by the spin-spin nuclear interaction and broadened by electron-nuclear dipole-dipole relaxation.
Keywords: $^{29}$
Received: 14.11.2013
Accepted: 03.12.2013
English version:
Semiconductors, 2014, Volume 48, Issue 8, Pages 989–995
DOI: https://doi.org/10.1134/S1063782614080144
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Koplak, A. I. Dmitriev, S. G. Vasil'ev, E. A. Steinman, S. I. Alekseev, R. B. Morgunov, “Deformation paramagnetic defects in Fz-$^{29}$Si:P crystals”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1017–1023; Semiconductors, 48:8 (2014), 989–995
Citation in format AMSBIB
\Bibitem{KopDmiVas14}
\by O.~V.~Koplak, A.~I.~Dmitriev, S.~G.~Vasil'ev, E.~A.~Steinman, S.~I.~Alekseev, R.~B.~Morgunov
\paper Deformation paramagnetic defects in Fz-$^{29}$Si:P crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 8
\pages 1017--1023
\mathnet{http://mi.mathnet.ru/phts7661}
\elib{https://elibrary.ru/item.asp?id=22018903}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 8
\pages 989--995
\crossref{https://doi.org/10.1134/S1063782614080144}
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  • https://www.mathnet.ru/eng/phts/v48/i8/p1017
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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