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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1024–1026 (Mi phts7662)  
Electronic properties of semiconductors

Study of a deep donor level in $n$-GaAs by electron transport data obtained under hydrostatic pressure

M. I. Daunov, U. Z. Zalibekov, I. K. Kamilov, A. Yu. Mollaev

Daghestan Institute of Physics after Amirkhanov
Full-text PDF (182 kB)
Abstract: The experimental pressure dependences of the resistivity and Hall effect at hydrostatic pressures from atmospheric to 18 GPa in $n$-GaAs are quantitatively analyzed. In the pressure range 10 $\le P\le$ 18 GPa, a deep donor center is found. The position of its energy level relative to the conduction-band $\Gamma$ valley edge at atmospheric pressure and its relation to the arsenic vacancy are discussed.
Received: 21.11.2013
Accepted: 19.12.2013
English version:
Semiconductors, 2014, Volume 48, Issue 8, Pages 996–998
DOI: https://doi.org/10.1134/S1063782614080089
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. I. Daunov, U. Z. Zalibekov, I. K. Kamilov, A. Yu. Mollaev, “Study of a deep donor level in $n$-GaAs by electron transport data obtained under hydrostatic pressure”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1024–1026; Semiconductors, 48:8 (2014), 996–998
Citation in format AMSBIB
\Bibitem{DauZalKam14}
\by M.~I.~Daunov, U.~Z.~Zalibekov, I.~K.~Kamilov, A.~Yu.~Mollaev
\paper Study of a deep donor level in $n$-GaAs by electron transport data obtained under hydrostatic pressure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 8
\pages 1024--1026
\mathnet{http://mi.mathnet.ru/phts7662}
\elib{https://elibrary.ru/item.asp?id=22018904}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 8
\pages 996--998
\crossref{https://doi.org/10.1134/S1063782614080089}
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