|
|
Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1027–1032
(Mi phts7663)
|
|
|
|
This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Effect of interband scattering on transport phenomena in $p$-PbSb$_2$Te$_4$
S. A. Nemovab, N. M. Blagikha, M. B. Dzhafarovc a Peter the Great St. Petersburg Polytechnic University
b Zabaikalsky State University, Chita
c Azerbaijan Technological University
Abstract:
Experimental data on transport phenomena in $p$-PbSb$_2$Te$_4$ are qualitatively and quantitatively interpreted within the context of the two-band model with interband scattering in the temperature range 77–300 K. The parameters of the two-band model are determined. Specifically, it is found that the density-of-state effective masses of light and heavy holes are, correspondingly, $m_{d1}\approx$ 0.5 $m_0$ and $m_{d2}\approx$ 0.9 $m_0$ ($m_0$ is the free electron mass) and the energy gap between nonequivalent extrema are $\Delta E_v(T)\approx$ 0.23 – 4.5 $\times$ 10$^{-2}$($T$/100 – 1) eV.
Received: 18.12.2013 Accepted: 23.12.2013
Citation:
S. A. Nemov, N. M. Blagikh, M. B. Dzhafarov, “Effect of interband scattering on transport phenomena in $p$-PbSb$_2$Te$_4$”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1027–1032; Semiconductors, 48:8 (2014), 999–1005
Linking options:
https://www.mathnet.ru/eng/phts7663 https://www.mathnet.ru/eng/phts/v48/i8/p1027
|
|