Conductivity compensation in $n$-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

The effect of electron irradiation on $n$-4H-SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be $V_d\approx$ 0.25 cm$^{-1}$. Total conductivity compensation in samples with an initial carrier concentration of (1–2) $\times$ 10$^{15}$ cm$^{-2}$ is observed at irradiation doses of $\sim$ 5 $\cdot$ 10$^{15}$ cm$^{-2}$. Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.