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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1070–1074
(Mi phts7671)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors
P. P. Fastykovsky, M. A. Glauberman I. I. Mechnikov Odessa National University
Abstract:
The dependences of surface potential and the density of surface states of silicon MOS structures with nanoscale silicon oxide on the humidity of the surrounding gaseous medium were investigated. Based on the model of moisture sensitivity of such structures being in depletion modes and weak inversion, an analytical dependence of the surface potential on the humidity was received and the criteria of its linearity were determined. The validity of the analytical dependence was confirmed experimentally.
Received: 21.03.2013 Accepted: 29.04.2013
Citation:
P. P. Fastykovsky, M. A. Glauberman, “Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1070–1074; Semiconductors, 48:8 (2014), 1041–1045
Linking options:
https://www.mathnet.ru/eng/phts7671 https://www.mathnet.ru/eng/phts/v48/i8/p1070
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