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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1117–1122 (Mi phts7677)  

This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example

N. N. Gerasimenkoabc, K. B. Tynyshtykbaevd, V. V. Starkove, N. A. Medetova, S. Zh. Tokmoldind, E. A. Gostevaf

a National Research University of Electronic Technology
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
c Tomsk State University
d Institute of Physics and Technology, Ministry of Education and Science of the Republic of Kazakhstan
e Institute of Microelectronics Technology and High-Purity Materials RAS
f National University of Science and Technology «MISIS», Moscow
Full-text PDF (533 kB) Citations (2)
Abstract: Upon the prolonged anodic etching of single-crystalline silicon $p$-Si(100) in electrolytes with an internal current source, crack formation is observed. It is shown that the cracks are formed under the conditions of “soft” action, when the formation of quasi-equilibrium point defects, their subsequent space-time distribution as a result of migration to various drains, and the formation of pores are possible. The conditions of soft action take place upon electrotechnical etching in an electrolyte with an internal current source, and also at low-energy near-threshold exposure to thermal, mechanical, chemical, and other actions. A conclusion is made concerning the general character of the processes of crack formation in elastic solids related to the transformation of pores into micropores and cracks for the case of prolonged action.
Received: 30.05.2013
Accepted: 06.12.2013
English version:
Semiconductors, 2014, Volume 48, Issue 8, Pages 1088–1093
DOI: https://doi.org/10.1134/S1063782614080120
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Gerasimenko, K. B. Tynyshtykbaev, V. V. Starkov, N. A. Medetov, S. Zh. Tokmoldin, E. A. Gosteva, “On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1117–1122; Semiconductors, 48:8 (2014), 1088–1093
Citation in format AMSBIB
\Bibitem{GerTynSta14}
\by N.~N.~Gerasimenko, K.~B.~Tynyshtykbaev, V.~V.~Starkov, N.~A.~Medetov, S.~Zh.~Tokmoldin, E.~A.~Gosteva
\paper On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 8
\pages 1117--1122
\mathnet{http://mi.mathnet.ru/phts7677}
\elib{https://elibrary.ru/item.asp?id=22018919}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 8
\pages 1088--1093
\crossref{https://doi.org/10.1134/S1063782614080120}
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  • https://www.mathnet.ru/eng/phts/v48/i8/p1117
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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