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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 8, Pages 1117–1122
(Mi phts7677)
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This article is cited in 2 scientific papers (total in 2 papers)
Manufacturing, processing, testing of materials and structures
On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example
N. N. Gerasimenkoabc, K. B. Tynyshtykbaevd, V. V. Starkove, N. A. Medetova, S. Zh. Tokmoldind, E. A. Gostevaf a National Research University of Electronic Technology
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
c Tomsk State University
d Institute of Physics and Technology, Ministry of Education and Science of the
Republic of Kazakhstan
e Institute of Microelectronics Technology and High-Purity Materials RAS
f National University of Science and Technology «MISIS», Moscow
Abstract:
Upon the prolonged anodic etching of single-crystalline silicon $p$-Si(100) in electrolytes with an internal current source, crack formation is observed. It is shown that the cracks are formed under the conditions of “soft” action, when the formation of quasi-equilibrium point defects, their subsequent space-time distribution as a result of migration to various drains, and the formation of pores are possible. The conditions of soft action take place upon electrotechnical etching in an electrolyte with an internal current source, and also at low-energy near-threshold exposure to thermal, mechanical, chemical, and other actions. A conclusion is made concerning the general character of the processes of crack formation in elastic solids related to the transformation of pores into micropores and cracks for the case of prolonged action.
Received: 30.05.2013 Accepted: 06.12.2013
Citation:
N. N. Gerasimenko, K. B. Tynyshtykbaev, V. V. Starkov, N. A. Medetov, S. Zh. Tokmoldin, E. A. Gosteva, “On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1117–1122; Semiconductors, 48:8 (2014), 1088–1093
Linking options:
https://www.mathnet.ru/eng/phts7677 https://www.mathnet.ru/eng/phts/v48/i8/p1117
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