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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 9, Pages 1176–1181
(Mi phts7686)
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This article is cited in 6 scientific papers (total in 6 papers)
Electronic properties of semiconductors
Structural and optical properties of ZnO films produced by a nonvacuum chemical technique
V. V. Strel'chuka, E. A. Avramenkoa, A. S. Romaniuka, L. V. Zaviyalovaa, G. S. Svechnikova, V. S. Khomchenkoa, N. N. Roshchinaa, V. N. Tkachb a Institute of Semiconductor Physics NAS, Kiev
b V. Bakul Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Kiev
Abstract:
Zinc-oxide films are grown by a new nonvacuum chemical method: the pyrolysis of zinc acetylacetonate at a temperature of 280–300°C. The structural, phonon, and emission properties of the ZnO films are studied by X-ray diffraction analysis, scanning electron microscopy, Raman measurements, and photoluminescence spectroscopy. The high-intensity (0002) peak recorded in the X-ray diffraction spectra indicate the predominant orientation of crystallites in the (0001) direction in the ZnO films. From analysis of the $E_2^{\mathrm{high}}$ mode in the Raman spectrum of the ZnO films, the elastic strains $\varepsilon_{zz}$ ($\sim$ 3.2 $\times$ 10$^{-3}$) and the quality of the crystal structure are determined. The characteristics of the pyrolytic ZnO films are compared with the corresponding characteristics of ZnO films grown by molecular-beam epitaxy. As a result, the possibility of growing polycrystalline ZnO films of rather high quality by a practically feasible low-temperature technique is demonstrated.
Received: 01.10.2013 Accepted: 20.01.2014
Citation:
V. V. Strel'chuk, E. A. Avramenko, A. S. Romaniuk, L. V. Zaviyalova, G. S. Svechnikov, V. S. Khomchenko, N. N. Roshchina, V. N. Tkach, “Structural and optical properties of ZnO films produced by a nonvacuum chemical technique”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1176–1181; Semiconductors, 48:9 (2014), 1145–1150
Linking options:
https://www.mathnet.ru/eng/phts7686 https://www.mathnet.ru/eng/phts/v48/i9/p1176
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