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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 9, Pages 1198–1204
(Mi phts7691)
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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures
I. M. Kotinaa, A. M. Danishevskiib, O. I. Kon'kovb, E. I. Terukovbc, L. M. Tuhkonena a B. P. Konstantinov Petersburg Nuclear Physics Institute, Russian Academy of Sciences
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
Abstract:
The mechanism of electron transport in amorphous-crystalline heterostructures fabricated on the basis of high-resistivity $p$-Si is considered in order to explain the features of experimental photosensitivity spectra for the specified structures prepared on substrates with various resistivities. The cause of the formation of an inversion layer at the heteroboundary in these structures and the effect of resistivity on the value of surface potentials is clarified. Nontrivial data on the effect of the work function of metallic contacts to an amorphous film on the mechanism of photocurrent formation are presented.
Received: 25.12.2013 Accepted: 30.12.2013
Citation:
I. M. Kotina, A. M. Danishevskii, O. I. Kon'kov, E. I. Terukov, L. M. Tuhkonen, “On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1198–1204; Semiconductors, 1167–1173
Linking options:
https://www.mathnet.ru/eng/phts7691 https://www.mathnet.ru/eng/phts/v48/i9/p1198
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