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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 9, Pages 1234–1236 (Mi phts7696)  

Micro- and nanocrystalline, porous, composite semiconductors

Effect of the duration of electrochemical anodization on the microhardness of macroporous silicon

A. A. Dmitrievskii, N. Yu. Efremova, A. V. Druzhkin, T. O. Korosteleva, D. G. Guseva

Tambov State University named after G.R. Derzhavin
Abstract: The dependence of the microhardness $H$ of macroporous silicon layers formed on the duration $t_{\mathrm{an}}$ of electrochemical anodization at a constant current density of $J$ = 20 mA/cm$^2$ is studied. It is shown that the nonlinear run of the dependence $H(t_{\mathrm{an}})$ is due to the influence exerted on the microhardness not only by the surface density of pores, but also by the single-crystal base at $L<$ 10$h$, where $L$ and $h$ are the thickness of the porous layer and the depth of indenter penetration, respectively.
Received: 23.10.2013
Accepted: 07.11.2013
English version:
Semiconductors, 2014, Volume 48, Issue 9, Pages 1202–1204
DOI: https://doi.org/10.1134/S1063782614090061
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Dmitrievskii, N. Yu. Efremova, A. V. Druzhkin, T. O. Korosteleva, D. G. Guseva, “Effect of the duration of electrochemical anodization on the microhardness of macroporous silicon”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1234–1236; Semiconductors, 48:9 (2014), 1202–1204
Citation in format AMSBIB
\Bibitem{DmiEfrDru14}
\by A.~A.~Dmitrievskii, N.~Yu.~Efremova, A.~V.~Druzhkin, T.~O.~Korosteleva, D.~G.~Guseva
\paper Effect of the duration of electrochemical anodization on the microhardness of macroporous silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 9
\pages 1234--1236
\mathnet{http://mi.mathnet.ru/phts7696}
\elib{https://elibrary.ru/item.asp?id=22018939}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 9
\pages 1202--1204
\crossref{https://doi.org/10.1134/S1063782614090061}
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